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EE-SX1330 反射式光電傳感器

內(nèi)容

Absolute Maximum Ratings (Ta = 25?C)

Item
Symbol
Rated value
Unit
EmitterForward currentIF25 *1mA
Pulse forward currentIFP100 *2mA
Reverse voltageVR5V
DetectorCollector-Emitter voltageVCEO12V
Emitter-Collector voltageVECO5V
Collector currentIC20mA
Collector dissipationPC75 *1mW
Operating temperatureTopr-30 to +85 *1?C
Storage temperatureTstg-40 to +90 *1?C
Reflow soldering temperatureTsol255 *3?C

*1. Refer to the temperature rating chart if the ambient temperature exceeds 25?C.
*2. Duty ratio: 1%, Pulse width: 0.1 ms
*3. Complete soldering within 10 seconds for reflow soldering.

Electrical and Optical Characteristics (Ta = 25?C)

Item
Symbol
Value
Unit
Condition
MIN.TYP.MAX.
EmitterForward voltageVF---1.11.3VIF = 5mA
Reverse currentIR------10μAVR = 5V
Peak emission wavelengthλP---940---nmIF = 20mA
DetectorLight currentIL100---1,000μAIF = 5mA,
VCE = 5V
Dark currentID---10100nAVCE = 10V,
0×
Collector-Emitter
saturated voltage
VCE (sat)---0.10.4VIF = 20mA,
IL = 100?A
Peak spectral
sensitivity wavelength
λP---900---nmVCE = 5V
Rising timetr---19---μsVCC = 5V,
RL = 100Ω,
IL = 500?A
Falling timetf---26---μsVCC = 5V,
RL = 100Ω,
IL = 500?A

Note: Refer to the following timing diagram for tr and tf.
EESX1330:Dimensions

Exterior Specifications

Connecting methodWeight (g)Material
Case
SMT0.2PPS


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